2sd2653k transistors low frequency amplifier 2sd2653k ! !! ! application low frequency amplifier driver ! !! ! features 1) a collector current is large. 2) v ce(sat) 180mv at i c = 1a / i b = 50ma ! !! ! external dimensions (units : mm) rohm : smt3eiaj : sc-59 jedec : sot-346 (1) emitter(2) base (3) collector abbreviated symbol : fw 0.8 0.15 0~0.1 0.3min. 1.1 ( 2 ) ( 1 ) 2.8 1.6 0.4 ( 3 ) 2.9 1.9 0.95 0.95 each lead has same dimensions ! !! ! absolute maximum ratings (ta=25 c) parameter symbol v cbo v ceo v ebo i c i cp p c tj tstg limits 1512 62 200150 ? 55~ + 150 4 ? unit vv v a a mw c c collector-base voltagecollector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature ? single pulse, p w = 1ms ! !! ! electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions v cb = 10v, i e = 0a, f = 1mhz f t ? 360 ? mhz v ce = 2v, i e =? 200ma, f = 100mhz bv cbo 15 ?? v i c = 10 a bv ceo 12 ?? v i c = 1ma bv ebo 6 ?? v i e = 10 a i cbo ?? 100 na v cb = 15v i ebo ?? 100 na v eb = 6v v ce(sat) ? 90 180 mv i c = 1a, i b = 50ma h fe 270 ? 680 ? v ce = 2v, i c = 200ma cob ? 20 ? pf ? ? collector-base breakdown voltagecollector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current gain transition frequency corrector output capacitance ? pulsed ! !! ! packaging specifications 2sd2653k t146 3000 type packagecode basic ordering unit (pieces) taping downloaded from: http:///
2sd2653k transistors ! !! ! electrical characteristic curves 0.001 0.01 0.1 1 10 collector current : i c (a) 10 dc current gain : h fe 1000 100 ta = 100 c ta =? 40 c ta = 25 c v ce = 2v pulsed fig.1 dc current gain vs. collector current 0.001 0.01 0.1 1 10 collector current : i c (a) 0.001 0.01 1 0.1 i c /i b = 20/1 v ce = 2v pulsed ta = 100 c ta =? 40 c ta = 25 c fig.2 base-emitter saturation voltage vs. collector current collector to emitter saturation voltage : v ce(sat) (v) 0.001 0.01 0.1 1 10 collector current : i c (a) 0.001 collector saturation voltage : v ce(sat) (v) 0.01 0.1 1 ta = 25 c pulsed i c /i b = 10/1 i c /i b = 20/1 i c /i b = 50/1 fig.3 collector-emitter saturation voltage vs. collector current 0 0.5 1 1.5 base to emitter current : v be (v) 0.001 collector current : i c (a) 0.01 10 0.1 1 v ce = 2v pulsed ta = 100 c ta =? 40 c ta = 25 c fig.4 grounded emitter propagation characteristics 0.001 0.01 0.1 1 10 emitter current : i e (a) 10 transition frequency : f t (mhz) 1000 100 ta = 25 c v ce = 2v f = 100mhz fig.5 gain bandwidth product vs. emitter current 0.01 0.1 1 10 1 10 1000 100 ta = 25 c v ce = 5v f = 100mhz tstg tdon tf tr fig.6 switching time collector current : i c (a) switching time : (ns) 1 10 100 0.1 1 10 100 1000 f = 1mhz i c = 0a ta = 25?c collector output capacitance : cob (pf) emitter input capacitance : cib (pf) cib cob fig.7 collector output capacitance vs. collector-base voltageemitter input capacitance vs. emitter-base voltage emitter to base voltage : v eb ( v) collector to base voltage : v cb ( v) 0.01 0.1 1 10 100 0.01 0.1 1 10 ta = 25 c single pulsed dc operation pw=100ms 10ms 1ms fig.8 safe operating area collector to emitter voltage : v ce (v) collector current : i c (a) downloaded from: http:///
appendix appendix1-rev1.0 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document use silicon as a basic material.products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction. downloaded from: http:///
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